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bgv503 negative voltage generator for biasing gaas fets and power amplifiers data sheet, bgv503, november 2002 never stop thinking. wireless silicon discretes
edition 2001-11-09 2002-11-11 published by infineon technologies ag, st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 2001 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted char- acteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infin- eon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
for questions on technology, delivery and prices please contact the infineon technologies offices in germany or the infineon technologies companies and representatives worldwide: see our webpage at http://www.infineon.com bgv503 data sheet revision history: 2002-11-11 previous version: 2001-05-16 page subjects (major changes since last revision) * preliminary removed, figure 3 (application) updated we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: mcdocu.comments@infineon.com
data sheet 4 2001-11-09 2002-11-11 esd: electrostatic discharge sensitive device, observe handling precaution! type package marking bgv503 p-tssop-10 bgv503s negative voltage generator bgv503 f or biasing gaas fets and power amplifiers features ? one-stage charge-pump with internal drain current regulator for biasing gaas-fets operating voltage range: + 2.7v ? 5.0v typical output voltage: ? 2.5v output current: 3ma (typ) p-p output voltage ripple: 25mv ? 40mv @ c out = 1f; i out = 3ma integrated oscillator f osz : 230khz standby supply current: < 5a logic-level shutdown mode
bgv503 data sheet 5 2001-11-09 2002-11-11 electrical characteristics at t a =25 c, unless otherwise specified characteristics limit values unit test conditions min. typ. max. input voltage range 2.7 5.0 v ground ( v ss )0v output voltage - 2.1 - 1.4 v v cc = 2.7 v; i out = 3 ma - 2.5- 1.7v v cc = 3.0 v; i out = 3 ma - 4.6- 3.9v v cc = 5.0 v; i out = 3 ma power efficiency 76 % v cc = 3.0 v; r load = 1 k ? output voltage ripple 1) 1) c out = 100 nf 20 mv v cc = 3.0 v; i out = 0 ma 100 mv v cc = 3.0 v; i out = 3 ma no-load supply current t a =-40 c 0.65 2.0 ma v cc = 3.0 v voltage conversion efficiency 99.6 % i out = 0 ma shutdown/enable input bias current 1 a shutdown input supply current 5 a turn on time 51 s temperature range - 40 105 c
bgv503 data sheet 6 2001-11-09 2002-11-11 pin descripion pin configuration figure 1 bgv503 in package p-tssop-10 pin no. pin name description 1 r ref sense resistor for the regulator 2 v ref reference voltage of the regulator 3 nv negative output-voltage (unregulated) 4 v ss ground connection 5 v cc positive supply voltage 6 v disq enable (ttl compatible) 7 v con reference voltage of the regulator 8 v neg regulated output voltage for biasing gaas fets 9 c1d charge pump capacitor 10 c2p charge pump capacitor eht08501 1 2 3 nv 4 5 c2p 10 9 c1d 8 7 6 ref r v ref v ss cc v v neg v con bgv 503 v disq
bgv503 data sheet 7 2001-11-09 2002-11-11 functional block diagram the bgv503 is a charge pump based negative voltage generator. the supply voltage ( v cc ) is inverted and applied to the output nv the bgv503 consists of an internal oscillator, a switching control circuit, the internal charge pump switches and a drain current regulator. the switching frequency (clk) of the charge-pump is determined by the integrated oscillator and is between 100 khz and 400 khz. it is possible to stop the operating of the bgv503 by connecting v disq to a voltage lower than 1 v (shutdown mode). the switching control circuit ensures that the internal mos-switches of the charge-pump operate at the correct time. the regulator consists of two transistors and two internal resistors. it can be used to control the biasing of power amplifiers or gaas-fet amplifiers (see figure 3). figure 2 block diagram of the negative voltage generator
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bgv503 data sheet 8 2001-11-09 2002-11-11 typical applications for all applications use capacitors with low effective series resistance (esr) to maintain a low dropout voltage with high stability, good conversion efficiency and a low p-p voltage ripple. an additional capacitor in the supply line (between v cc and v ss ) is useful to reduce the ac input impedance. as a consequence, this minimize the spurious signals (emi) on the supply lines, that came from the current peaks when the bgv503 is switching. the value of this capacitor depends on the circuit configuration and on customer requirements concerning emi; 1 f is regarded as sufficient. figure 3 bgv503; inverting charge pump with gaas fet drain current regulation loop note: for the above application see application note no. 80

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bgv503 data sheet 9 2001-11-09 2002-11-11 typical operating characteristics oscillator frequency vs. temperature @ i out = 3ma v cc = parameter ?40 ?20 0 20 40 60 80 100 120 100 150 200 250 300 350 400 t [c] fosz[khz] 2.7v 3v 5v supply current vs. temperature @ i out = 0ma v cc = parameter ? 40 ? 20 0 20 40 60 80 100 120 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 t [c] i sup [ua] 2.7v 3v 5v output voltage vs. load current v cc = parameter 0 1 2 3 4 5 6 ? 5 ? 4.5 ? 4 ? 3.5 ? 3 ? 2.5 ? 2 ? 1.5 i out [ma] nv [v] 2.7v 3v 4v 5v power efficiency vs. load current 50 eht08519 pae v cc = 2.7 v 55 60 65 70 75 80 % 0 0.001 0.002 0.003 0.004 0.006 a out i 4 v 3 v 5 v
bgv503 data sheet 10 2001-11-09 2002-11-11 0 eht08516 ripple v out c 10 1 10 23 10 4 10 nf v cc = 5 v 4 v 3 v 50 100 150 200 250 mv ripple vs. output-capacity (peak to peak) @ i out =3ma output voltage, ac-coupled, v cc =3v, i out =0ma, c out =100nf eht08520 c2 pk-p k 12.8 mv ch2 2 s 10.0 mv m w b 1.00 output voltage, ac-coupled, v cc =3v, i out =3ma, c out =100nf eht08521 c2 pk-pk 88.0 mv ch2 2 s 20.0 mv m w b 1.00 output voltage vs. supply voltage @ i out = 3ma 2 3 4 5 6 ? 6 ? 5.5 ? 5 ? 4.5 ? 4 ? 3.5 ? 3 ? 2.5 ? 2 ? 1.5 ? 1 v cc [v] nv [v]
bgv503 data sheet 11 2001-11-09 2002-11-11 0.09 0.1 3 0.42 -0.1 +0.15 +0.08 -0.05 0.125 6 max. h a 0.1 4.9 0.25 a b c 3 0.1 c b a 0.08 m 0.22 0.05 0.1 max. 0.1 0.85 1.05 max. a c b 0.5 index marking package outline p-tssop-10 (plastic thin shrink small outline package)

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